Site-control of InAs quantum dots using ex-situ electron-beam lithographic patterning of GaAs substrates
Site-control of InAs quantum dots using ex-situ electron-beam lithographic patterning of GaAs substrates
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DOI：
10.1143/jjap.45.2519
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发表时间：
2006-04-01
期刊：
影响因子：
--
通讯作者：
Ritchie, DA
中科院分区：
文献类型：
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作者：
Atkinson, P;Ward, MB;Ritchie, DA
传统的电子束光刻技术是通过对衬底上的小孔进行干法或湿法刻蚀来控制InAs自组装量子点的位置。研究了孔洞占有率与孔洞面积和孔洞深度的关系。我们展示了孔尺寸的范围，其中超过30%的位置包含单个网点，并且对于类似于60 nm宽、类似于35 nm深的干蚀刻孔和类似于90 nm宽、类似于20 nm深的湿法蚀刻孔，可以看到高达60%的单网点占有率。即使在点和再生长界面之间只有10 nm的GaAs缓冲器，这些放置的点仍然显示出单点发光。
Conventional e-beam lithography followed by either dry or wet etching of small holes in GaAs Substrates has been used to control the position of InAs self-assembled quantum dots. The dependence of hole occupancy on both hole area and hole depth has been investigated. We show a range of hole sizes where greater than 30% of sites contain a single dot with up to 60% single dot occupancy seen for dry-etched holes similar to 60 nm wide, similar to 35 nm deep and for wet-etched holes similar to 90 nm wide, similar to 20 nm deep. Single dot luminescence from these placed dots is demonstrated despite only a 10 nm GaAs buffer between dots and regrowth interface.