In situ synthesis of Bi/Bi2S3 heteronanowires with nonlinear electrical transport
In situ synthesis of Bi/Bi2S3 heteronanowires with nonlinear electrical transport
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DOI：
10.1016/j.jallcom.2007.07.008
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发表时间：
2008-08
影响因子：
6.2
通讯作者：
Xiaohu Huang;You-wen Yang;Xincun Dou;Yonggang Zhu;Guanghai Li
中科院分区：
文献类型：
--
作者：
Xiaohu Huang;You-wen Yang;Xincun Dou;Yonggang Zhu;Guanghai Li
采用电化学方法原位合成了Bi/Bi 2S 3异质纳米线。纯Bi纳米线首先通过电沉积在AAM的孔中形成。随着反应温度的升高，Bi与S反应生成Bi 2S 3。在AAM表面生长出由纳米针组成的Bi 2S 3微刺猬。简要地提出了可能的生长过程。在Bi/Bi 2S 3体系中观察到非线性电输运。所获得的Bi/Bi 2S 3异质结构可在光、电、气敏器件中得到应用。
Bi/Bi2S3heteronanowires were in situ synthesized via an electrochemical synthesis. Pure Bi nanowires were first formed in the pores of AAM by electrodeposition. With increasing the reaction temperature, Bi2S3were formed through reaction between Bi and S. The synthesized Bi2S3microhedgehogs composed of nanoneedles were found standing on the surface of AAM after overgrowth. The possible growth process was proposed briefly. Nonlinear electrical transport was observed in the Bi/Bi2S3system. The obtained Bi/Bi2S3heterostructure may find applications in optical, electrical and gas sensor devices.