Polymeric precursor for solution-processed amorphous silicon carbide
Polymeric precursor for solution-processed amorphous silicon carbide
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DOI：
10.1039/c5tc03169a
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发表时间：
2015-01-01
影响因子：
6.4
通讯作者：
Shimoda, Tatsuya
中科院分区：
文献类型：
--
作者：
Masuda, Takashi;Iwasaka, Akira;Shimoda, Tatsuya
Amorphous silicon carbide (a-SiC) films are deposited via solution-based processes using a polymeric precursor solution consisting of polydihydrosilane with pendant hexyl groups. Unlike conventional polymeric precursors, this polymer neither requires catalysts nor oxidation for its synthesis and cross-linkage. Therefore, our polymeric precursor provides sufficient purity for the fabrication of solution-processed semiconducting a-SiC. Polymer-to-ceramic conversion is systematically investigated under various pyrolysis temperatures ranging from 320 degrees C to 420 degrees C. The polymer primarily undergoes cross-linking at temperatures above 150 degrees C with increasing polymer fraction; this cross-linking is followed by carbon atoms being incorporated into an amorphous network at 380 degrees C. The incorporated carbon atoms in the film are predominantly in the sp(3)-bonding state with almost no amorphous graphite-like sp(2) C=C clusters, leading to marked changes in the film's properties. The conductivity values of the resulting a-SiC films are comparable with those of semiconducting a-SiC films prepared using vacuum-based deposition.
