Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells
Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells
复制标题
嵌入 InGaAs/GaAs 多量子阱中的 InAs 自组装量子点中的局域激子
DOI：
10.1002/pssa.200306302
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
R. P. Sierra
中科院分区：
文献类型：
--
作者：
T. Torchynska;J. L. C. Espinola;P. G. Eliseev;A. Stintz;K. Malloy;R. P. Sierra
研究了In0.15Ga0.8As/GaAs多量子阱（MQW）结构中高度均匀自组装InAs量子点的变温光致发光（PL）谱。分析了12-220 K范围内基态（GS）和第一激发态（1 ES）光跃迁的光谱峰移和PL温度猝灭。在12 K时，小的FWHM值等于37和27 meV，分别表征GS和1 ES跃迁。对于高度均匀的量子点，在低温下没有发现与量子点之间载流子的重新分布有关的半高宽的异常降低。发现InAs量子点中GS和1 ES的PL温度猝灭过程的激活能相同，约为50-52 meV。讨论了InAs自组装量子点的GS和1 ES热激活能相同的原因。
The temperature-dependent photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In 0.15 Ga 0.8 As/GaAs multi-quantum well (MQW) structures have been investigated. Spectral peak shift and PL temperature quenching for ground state (GS) and first excited state (1ES) optical transitions in the range 12-220 K are analyzed. Small FWHM values equal to 37 and 27 meV at 12 K characterize the GS and 1ES transitions, respectively. For the highly uniform QDs no unusual decrease of the FWHM at low temperatures was seen that would be connected with the redistribution of carriers between the QDs. The activation energies of the PL temperature quenching processes for GS and 1ES in InAs QDs are found to be the same, about 50-52 meV. The reasons for the same GS and 1ES thermal activation energies in InAs self-assembled QDs are discussed.