AIN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices
AIN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices
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DOI：
10.1063/1.3495782
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发表时间：
2010-10-04
影响因子：
4
通讯作者：
Pisano, Albert P.
中科院分区：
文献类型：
--
作者：
Lin, Chih-Ming;Lien, Wei-Cheng;Pisano, Albert P.
在大约 300-450 摄氏度的温度下，使用交流反应磁控溅射在 Si (100) 衬底上的外延立方碳化硅 (3C-SiC) 层上生长高度 c 轴取向的异质外延氮化铝 (AlN) 薄膜。通过 X 射线衍射、扫描电子显微镜和透射电子显微镜对 AlN 薄膜进行表征。在AlN/3C-SiC/Si复合结构上制作了双端口声表面波器件，预期瑞利模式表现出5200 m/s的高声速。结果证明了利用外延 3C-SiC 层上的 AlN 薄膜来制造压电谐振器件的潜力。 (C) 2010 年美国物理研究所。 [doi:10.1063/1.3495782]
Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C-SiC) layers on Si (100) substrates using alternating current reactive magnetron sputtering at temperatures between approximately 300-450 degrees C. The AlN films were characterized by x-ray diffraction, scanning electron microscope, and transmission electron microscopy. A two-port surface acoustic wave device was fabricated on the AlN/3C-SiC/Si composite structure, and an expected Rayleigh mode exhibited a high acoustic velocity of 5200 m/s. The results demonstrate the potential of utilizing AlN films on epitaxial 3C-SiC layers to create piezoelectric resonant devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3495782]