Magnetoresistive Random Access Memory: The Path to Competitiveness and Scalability
Magnetoresistive Random Access Memory: The Path to Competitiveness and Scalability
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DOI：
10.1109/jproc.2008.2004313
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发表时间：
2008-12
影响因子：
20.6
通讯作者：
J. Zhu
中科院分区：
文献类型：
--
作者：
J. Zhu
本文对磁阻随机存储器技术及其在过去十年中的发展进行了深入的回顾。传统的场驱动和最近的自旋扭矩转移驱动的设计进行了讨论。通过指出关键的技术挑战，各种设计的重要方面和特征被用来说明克服技术障碍的机制。本文的很大一部分致力于基于自旋扭矩转移效应的各种设计的原理，包括具有面内和垂直磁电极的存储元件。
This paper provides an in-depth review of the magnetoresistive random access memory technology and its developments over the past decade. Both the traditional field-driven and more recent spin torque transfer driven designs are discussed. By pointing out key technical challenges, important aspects and characteristics of various designs are used to illustrate mechanisms that overcome the technical obstacles. A significant portion of this paper is devoted to the principles of various designs based on spin torque transfer effect, including memory elements with in-plane and perpendicular magnetic electrodes.