Chemical Vapor Deposition of Boron Nitride
Chemical Vapor Deposition of Boron Nitride
复制标题
DOI：
10.1149/1.2069121
复制
发表时间：
1992-12
影响因子：
3.9
通讯作者：
N. Patibandla;K. Luthra
中科院分区：
文献类型：
--
作者：
N. Patibandla;K. Luthra
在温度850~1050℃、压力1.1~3.5托的条件下，研究了BCl3-NH3混合气体中氮化硼沉积的热力学和动力学。测量了宽范围的沉积速率，最高可达1μm/min。沉积速率受界面反应控制，反应活化能为35±3kcal/mol。沉积速率常数基本上与NH3分压无关，与BCl2分压呈近一级关系
Thermodynamics an kinetics of boron nitride deposition from BCl 3 -NH 3 gas mixtures were studied in the temperature range 850 to 1050 o C at pressures between 1.1 and 3.5 Torr. A wide range of deposition rates, as high as 1 μm/min, were measured. The rate of depositon was controlled by an interface reaction with an activation energy of 35±3 kcal/mol. The deposition rate constant essentially was independent of the partial pressure of NH 3 and showed a close to first-order dependence on the partial pressure of BCl 2