Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors
Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors
复制标题
DOI：
10.1063/1.116088
复制
发表时间：
1996-03
影响因子：
4
通讯作者：
B. Mcdermott;E. Gertner;S. Pittman;C. Seabury;Mau-Chung Frank Chang
中科院分区：
文献类型：
--
作者：
B. Mcdermott;E. Gertner;S. Pittman;C. Seabury;Mau-Chung Frank Chang
GaAsSb是一种低禁带隙，晶格与InP匹配，可替代GaInAs。研究了二乙基碲和四氯化碳的生长和掺杂。在原生碳掺杂的GaAsSb中，空穴浓度已达到1.3x1020cmGaAsSb[即，n-p-n异质结双极晶体管(n-p-n)结构的关键要求--掺杂激活不需要生长后退火]。这比金属有机化学气相沉积所报道的最好的碳掺杂InGaAs提高了七倍。霍尔测量表明，对于给定的载流子浓度，GaAsSb的空穴迁移率是GaInAs的55%-60%。研究了碳掺杂GaAsSb基区的InP HBT。
GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated. Hole concentrations up to 1.3×1020 cm−3 have been achieved in as‐grown carbon‐doped GaAsSb [i.e., no postgrowth annealing was necessary for dopant activation, a key requirement for n‐p‐n heterojunction bipolar transistor (HBT) structures]. This is a sevenfold improvement over the best carbon‐doped InGaAs reported by metalorganic chemical vapor deposition. Hall measurements indicate that GaAsSb’s hole mobility is 55%–60% of GaInAs’s, for a given carrier concentration. InP HBTs with carbon‐doped GaAsSb base are demonstrated.