Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions
复制标题

DOI:
10.1038/s41563-023-01704-z
复制
发表时间:
2023-11
期刊:
影响因子:
41.2
通讯作者:
Ji-Hoon Kang;Heechang Shin;Ki Seok Kim;M. Song;Doyoon Lee;Yuan Meng;Chanyeol Choi;J. Suh;Beom Jin Kim;Hyunseok Kim;Anh Tuan Hoang;Bo-In Park;Guanyu Zhou;Suresh Sundaram;P. Vuong;Jiho Shin;Jinyeong Choe;Zhihao Xu;Rehan Younas;Justin S. Kim;Sangmoon Han;Sangho Lee;Sun Ok Kim;Beomseok Kang;Seungju Seo;Hyojung Ahn;Seunghwan Seo;Kate Reidy;Eugene Park;Sungchul Mun;Min-Chul Park;Suyoun Lee;Hyung-Jun Kim;Hyun S. Kum;Peng Lin;Christopher Hinkle;Abdallah Ougazzaden;Jong-Hyun Ahn;Jeehwan Kim;S. Bae
Ji-Hoon Kang;Heechang Shin;Ki Seok Kim;M. Song;Doyoon Lee;Yuan Meng;Chanyeol Choi;J. Suh;Beom Jin Kim;Hyunseok Kim;Anh Tuan Hoang;Bo-In Park;Guanyu Zhou;Suresh Sundaram;P. Vuong;Jiho Shin;Jinyeong Choe;Zhihao Xu;Rehan Younas;Justin S. Kim;Sangmoon Han;Sangho Lee;Sun Ok Kim;Beomseok Kang;Seungju Seo;Hyojung Ahn;Seunghwan Seo;Kate Reidy;Eugene Park;Sungchul Mun;Min-Chul Park;Suyoun Lee;Hyung-Jun Kim;Hyun S. Kum;Peng Lin;Christopher Hinkle;Abdallah Ougazzaden;Jong-Hyun Ahn;Jeehwan Kim;S. Bae
中科院分区:
材料科学1区
文献类型:
--
作者:
Ji-Hoon Kang;Heechang Shin;Ki Seok Kim;M. Song;Doyoon Lee;Yuan Meng;Chanyeol Choi;J. Suh;Beom Jin Kim;Hyunseok Kim;Anh Tuan Hoang;Bo-In Park;Guanyu Zhou;Suresh Sundaram;P. Vuong;Jiho Shin;Jinyeong Choe;Zhihao Xu;Rehan Younas;Justin S. Kim;Sangmoon Han;Sangho Lee;Sun Ok Kim;Beomseok Kang;Seungju Seo;Hyojung Ahn;Seunghwan Seo;Kate Reidy;Eugene Park;Sungchul Mun;Min-Chul Park;Suyoun Lee;Hyung-Jun Kim;Hyun S. Kum;Peng Lin;Christopher Hinkle;Abdallah Ougazzaden;Jong-Hyun Ahn;Jeehwan Kim;S. Bae

文献摘要

相似文献

三维(3D)异质集成技术通过垂直堆叠功能层,从而创造出具有高集成密度和无与伦比的多功能性的新型3D电路架构,有望彻底改变电子领域。然而,传统的三维集成技术涉及复杂的晶圆加工和复杂的层间布线。在这里,我们展示了二维、基于材料的人工智能(AI)处理硬件的单片3D集成,具有最终的可集成性和多功能性。通过将自下而上合成的二维材料制成的人工智能处理层剥离和堆叠,将共六层晶体管和忆阻器阵列垂直集成到三维纳米系统中,以执行人工智能任务。这种完全单片3d集成的人工智能系统,由于其密集排列的人工智能处理层具有密集的层间连接,大大减少了处理时间、电压降、延迟和占地面积。这种单片3d集成人工智能系统的成功演示不仅将为电子器件的异构集成提供材料级解决方案,而且还将为具有终极并行性的前所未有的多功能计算硬件铺平道路。
Three-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality. A total of six layers of transistor and memristor arrays were vertically integrated into a 3D nanosystem to perform AI tasks, by peeling and stacking of AI processing layers made from bottom-up synthesized two-dimensional materials. This fully monolithic-3D-integrated AI system substantially reduces processing time, voltage drops, latency and footprint due to its densely packed AI processing layers with dense interlayer connectivity. The successful demonstration of this monolithic-3D-integrated AI system will not only provide a material-level solution for hetero-integration of electronics, but also pave the way for unprecedented multifunctional computing hardware with ultimate parallelism.