Domain walls in gapped graphene
Domain walls in gapped graphene
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DOI：
10.1103/physrevlett.101.087204
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发表时间：
2008-08-22
影响因子：
8.6
通讯作者：
Zhou, Fei
中科院分区：
文献类型：
--
作者：
Semenoff, G. W.;Semenoff, V.;Zhou, Fei
研究了有隙石墨烯中一类特殊的磁畴壁的电子性质。结果表明，它们可以支持局域在磁区壁附近并沿磁区长度传播的禁带中态。在有限密度的域壁下，这些态可以显著改变带隙石墨烯的电子性质。如果中间禁带被部分填充，则域壁的行为可以像嵌入半导体中的一维金属一样，并可能被用作单通道量子线。
The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support midgap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the midgap band is partially filled, the domain wall can behave like a one-dimensional metal embedded in a semiconductor and could potentially be used as a single-channel quantum wire.