Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
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DOI：
10.1186/1556-276x-7-75
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发表时间：
2012-01-13
影响因子：
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通讯作者：
Koo, Sang-Mo
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文献类型：
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作者：
Kang, Min-Seok;Ahn, Jung-Joon;Koo, Sang-Mo
金属，通常是金[金]，嵌入在碳化硅[碳化硅]上的覆盖金属接触层中的纳米粒子[NPs]被认为在改变原始接触的势垒高度方面具有实际应用。在这里，我们演示了使用银[银]纳米颗粒来有效地将电触点的势垒高度降低到4H-碳化硅。结果表明，所制备的碳化硅二极管结构(含Ag-NPs的镍)的势垒高度比含Au-NPs的样品和参考样品分别降低了0.11 eV和0.18 eV。实验结果还与基于董理论的解析模型和基于物理的二维数值模拟结果进行了比较。
Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC. It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-NPs and the reference samples, respectively. The experimental results have also been compared with both an analytic model based on Tung's theory and physics-based two-dimensional numerical simulations.