Field emission properties of heavily Si-doped AlN in triode-type display structure
Field emission properties of heavily Si-doped AlN in triode-type display structure
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DOI：
10.1063/1.1689398
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发表时间：
2004-03
影响因子：
4
通讯作者：
Y. Taniyasu;M. Kasu;T. Makimoto
中科院分区：
文献类型：
--
作者：
Y. Taniyasu;M. Kasu;T. Makimoto
Using heavily Si-doped AlN, a triode-type field emission display is demonstrated. The device consists of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. The device exhibits a low turn-on electric field of 11 V/μm, and the field emission current exponentially increases as the grid voltage increases. The field emission current reaches 9.5 μA at an electric field strength of 23 V/μm. Luminescence from the phosphor excited by the field-emitted electrons is uniform over the anode screen and is intense enough for the display application. The field emission current is stable over time.
