Characteristics of gadolinium oxide resistive switching memory with Pt–Al alloy top electrode and post-metallization annealing
Characteristics of gadolinium oxide resistive switching memory with Pt–Al alloy top electrode and post-metallization annealing
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DOI：
10.1088/0022-3727/46/27/275103
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发表时间：
2013-07
期刊：
影响因子：
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通讯作者：
J. Wang;De-Yuan Jian;Y. Ye;Li-Chun Chang;Chao‐Sung Lai
中科院分区：
文献类型：
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作者：
J. Wang;De-Yuan Jian;Y. Ye;Li-Chun Chang;Chao‐Sung Lai
研究了Pt-Al合金（5.88 at% Al）顶电极氧化钆（GdxOy）电阻开关存储器（rram）的性能和后金属化退火（PMA）的影响。随着PMA温度的升高，高阻态的电阻增大，由于TE与GdxOy薄膜之间的肖特基势垒高度增加，电阻比大于104。用x射线光电子能谱分析了TE/GdxOy界面上氧空位浓度随设定电压和复位电压变化的变化规律。在高于350°C的PMA温度下，具有Pt-Al合金TEs的GdxOy rram在130°C的测试温度下具有优于104 s的保留行为。Al扩散到GdxOy薄膜中，在TE/GdxOy界面形成AlxOy，这是保持增强的原因，因为它阻止了氧离子通过Pt晶界向外扩散。
The characteristics of gadolinium oxide (GdxOy) resistive switching memories (RRAMs) with a Pt–Al alloy (5.88 at% Al) top electrode (TE) and the effect of post-metallization annealing (PMA) were investigated. Resistance of high resistance state increased with increasing PMA temperature, achieving a resistance ratio of more than 104 owing to the increased Schottky barrier height between the TE and GdxOy film. The change in set and reset voltages corresponded to the concentration of oxygen vacancies at the TE/GdxOy interface, which was examined by x-ray photoelectron spectroscopy. At the PMA temperatures for higher than 350 °C, the GdxOy RRAMs with Pt–Al alloy TEs presented superior retention behaviour for more than 104 s at a testing temperature of 130 °C. Al diffusion into the GdxOy film to form AlxOy at the TE/GdxOy interface is responsible for the retention enhancement because it prevented the oxygen ions from out-diffusion through the Pt grain boundaries.