Aggregation of Monocrystalline β-FeSi 2 by Annealing and by Si Overlayer Growth
Aggregation of Monocrystalline β-FeSi 2 by Annealing and by Si Overlayer Growth
复制标题
通过退火和 Si 覆盖层生长来聚集单晶 β-FeSi 2
DOI：
10.1143/jjap.36.l1225
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发表时间：
1997
影响因子：
1.5
通讯作者：
Fumio Hasegawa Fumio Hasegawa
中科院分区：
文献类型：
--
作者：
T. Suemasu;Masaya Tanaka;T. Hashimoto;Y. Kumagai;Fumio Hasegawa Fumio Hasegawa
通过反应沉积外延（RDE）在Si（001）上生长的β-FeSi 2 薄膜在超高真空（UHV）中850℃退火一小时后聚集成岛状。当通过分子束外延(MBE)在750℃外延生长100nm厚的Si覆盖层时，β-FeSi 2 岛在Si晶体中进一步聚集成球形。截面透射电子显微镜（XTEM）观察表明，即使在退火和硅过度生长之后，两种材料之间的外延关系和单晶性质仍然保留。
β-FeSi 2 films grown on Si(001) by the reactive deposition epitaxy (RDE) aggregated into islands after annealing at 850°C for one hour in ultrahigh vacuum (UHV). When a 100-nm-thick Si overlayer was grown epitaxially at 750°C by molecular beam epitaxy (MBE), the β-FeSi 2 islands aggregated further into a spherical shape in Si crystals. Observation with cross-sectional transmission electron microscope (XTEM) revealed that the epitaxial relationship between the two materials and monocrystalline nature were preserved even after the annealing and the Si overgrowth.