Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition
Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition
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DOI：
10.4191/kcers.2016.53.6.647
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发表时间：
2016-11
影响因子：
2.5
通讯作者：
Ying Li;H. Katsui;T. Goto
中科院分区：
文献类型：
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作者：
Ying Li;H. Katsui;T. Goto
采用半导体激光器（波长为808 nm）和聚硅氧烷前驱体，在104pa高压下在玻碳衬底上制备了SiC薄膜。在1150 ~ 1422 K的沉积温度（T深）范围内形成了（111）取向SiC薄膜。在T深= 1262 K时，Lotgering系数大于0.96的SiC薄膜表面形貌呈金字塔状，晶粒呈花状。在T深度= 1262 K时，沉积速率最高（R深度）为220 μm h−1。
SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 104 Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature (T dep ) range of 1150 - 1422 K. At T dep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (R dep ) was 220 μm h −1 at T dep = 1262 K.