Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
复制标题
背栅超薄体In0.53Ga0.47As绝缘体n沟道金属氧化物半导体场效应晶体管的正偏压温度不稳定性和热载流子注入
DOI：
10.1088/0256-307x/32/11/117302
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发表时间：
2015-11-01
影响因子：
3.5
通讯作者：
Zhao Yi
中科院分区：
文献类型：
--
作者：
Tang Xiao-Yu;Lu Ji-Wu;Zhao Yi
采用直接键合方法，将外延生长的53Gao.47As层转移到以15 nm厚的Al_2O_3为掩埋层的硅衬底上，实现了厚度为8 nm和15 nm的超薄体(UTB)In_(53)Gao_(47)As-Oi(In_(53)Gao_(47)As-O_i)结构。利用这些具有良好电学特性的In_(53)Ga_(47)As-O_i结构制作了背栅n沟道金属氧化物半导体场效应晶体管(NMOSFET)。对Ino.53Gao.47As-OI nMOSFET进行了正偏压温度不稳定性(PBTI)和热载流子注入(HCI)特性研究。研究证实，体厚较薄的InNO.53Gao.47As-OI nMOSFET在PBTI和HCI应力下都有更严重的退化。此外，UTb Ino.53Gao.47As-OI nMOSFET的阈值电压和饱和电流的不同演化可能是由于缓慢的边界陷阱所致。
Ultra-thin-body (UTB) Ino.53Gao.47As-on-insulator (Ino.53Gao.47As-OI) structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown Ino.53Gao.47As layers to silicon substrates with 15-nm-thick Al2O3 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) are fabricated by using these Ino.53Gao.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability (PBTI) and hot carrier injection (HCI) characterizations are performed for the Ino.53Gao.47As-OI nMOSFETs. It is confirmed that the Ino.53Gao.47As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCI stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB Ino.53Gao.47As-OI nMOSFETs may be due to the slow border traps.