Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination
Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination
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DOI：
10.1063/1.1568157
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发表时间：
2003-05
影响因子：
3.2
通讯作者：
J. Zaumseil;K. Baldwin;J. Rogers
中科院分区：
文献类型：
--
作者：
J. Zaumseil;K. Baldwin;J. Rogers
由镀金高分辨率橡皮图章支撑的源/漏电极与有机半导体薄膜的软接触层压可以产生高性能的有机晶体管。本文提出了一个详细的研究这些设备的电气性能，重点是与p型和n型半导体并五苯和铜hexadecorophthalocene，分别与层压接触的性质。分析使用的模型开发的表征非晶硅晶体管。结果表明，与叠层接触及其与晶体管沟道的耦合相关的寄生电阻显著低于与通过直接在有机半导体顶部上蒸发金电极形成的常规接触相关的寄生电阻。这些和其他有吸引力的功能的晶体管建立软接触层压表明，他们可能是重要的基础和应用研究塑料电子和纳米电子系统的基础。
Soft contact lamination of source/drain electrodes supported by gold-coated high-resolution rubber stamps against organic semiconductor films can yield high-performance organic transistors. This article presents a detailed study of the electrical properties of these devices, with an emphasis on the nature of the laminated contacts with the p- and n-type semiconductors pentacene and copper hexadecafluorophthalocyanine, respectively. The analysis uses models developed for characterizing amorphous silicon transistors. The results demonstrate that the parasitic resistances related to the laminated contacts and their coupling to the transistor channel are considerably lower than those associated with conventional contacts formed by evaporation of gold electrodes directly on top of the organic semiconductors. These and other attractive features of transistors built by soft contact lamination suggest that they may be important for basic and applied studies in plastic electronics and nanoelectronic systems based ...