High efficiency long wavelength VCSEL on InP grown by MOCVD
High efficiency long wavelength VCSEL on InP grown by MOCVD
复制标题
MOCVD 生长的 InP 上的高效长波长 VCSEL
DOI：
10.1049/el:20030288
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发表时间：
2003
影响因子：
1.1
通讯作者：
C. Zah
中科院分区：
文献类型：
--
作者：
N. Nishiyama;C. Caneau;G. Guryanov;Xingsheng Liu;M. Hu;C. Zah
采用金属有机物化学气相沉积（MOCVD）生长的埋层隧道结结构，实现了1.53 μ m/spl垂直腔面发射激光器（VCSEL）的高效率连续工作。器件的差分量子效率高达46%，单模功率为1 mW。最小阈值电流和电压为0.45 mA和1.3 V，在室温下，分别为5 /spl μ/m直径的设备。
High efficiency continuous-wave operation of 1.53 /spl mu/m vertical cavity surface emitting lasers (VCSELs) with buried tunnel junction grown by metal organic chemical vapour deposition (MOCVD) has been demonstrated. Devices show a high differential quantum efficiency of 46% and a singlemode power of 1 mW. Minimum threshold current and voltage are 0.45 mA and 1.3 V at room temperature, respectively for devices of 5 /spl mu/m diameter.