Electric field-induced hole transport in copper(I) thiocyanate (CuSCN) thin-films processed from solution at room temperature
Electric field-induced hole transport in copper(I) thiocyanate (CuSCN) thin-films processed from solution at room temperature
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DOI：
10.1039/c2cc37065d
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发表时间：
2013-01-01
影响因子：
4.9
通讯作者：
Anthopoulos, Thomas D.
中科院分区：
文献类型：
--
作者：
Pattanasattayavong, Pichaya;Ndjawa, Guy Olivier Ngongang;Anthopoulos, Thomas D.
本文研究了硫氰酸铜（CuSCN）溶液处理薄膜的光学、结构和电荷输运性质。结果表明，制备的CuSCN薄膜具有纳米晶结构、高透明性和本征空穴传输特性，最大场效应迁移率在0.01-0.1 cm（2）V-1 s（-1）范围内。
The optical, structural and charge transport properties of solution-processed films of copper(I) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of similar to 20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm(2) V-1 s(-1).