Growth of InAs Nanowires on SiO2 Substrates: Nucleation, Evolution, and the Role of Au Nanoparticles
Growth of InAs Nanowires on SiO2 Substrates: Nucleation, Evolution, and the Role of Au Nanoparticles
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InAs 纳米线在 SiO2 基底上的生长：成核、演化和 Au 纳米粒子的作用
DOI：
10.1021/jp0733872
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发表时间：
2007
影响因子：
3.7
通讯作者：
Deli Wang
中科院分区：
文献类型：
--
作者：
S. Dayeh;E. Yu;Deli Wang
研究了用有机金属气相外延（OMVPE）方法在SiO2/Si衬底上生长InAs纳米线的成核和生长过程。通过系统的表征作为V/III前体比，前体流速，生长温度，生长时间，和存在/不存在的Au纳米粒子的函数的InAs NW形态，一些显着的见解InAs NW使用OMVPE生长已经开发。具体地，我们已经发现（i）InAs纳米线的生长可以从单个铟（In）液滴开始，（ii）Au纳米颗粒（NP）增强V族前体（AsH 3）热解，但不是成核生长所必需的，（iii）InAs纳米线在SiO2衬底上的生长发生在动力学限制的气-液-固（VLS）生长状态中，（iv）InAs纳米线在SiO2膜上在高温下分解，即使在显著的AsH 3超压下，以及（v）V/III比是InAs纳米线的VLS生长中的生长速率限制因素。许多关于InAs NW生长的这些发现可以是基因。
We have studied the nucleation and growth of InAs nanowires (NWs) on SiO2/Si substrates by organometallic vapor-phase epitaxy (OMVPE). Through systematic characterization of InAs NW morphology as a function of V/III precursor ratio, precursor flow rates, growth temperature, growth time, and the presence/absence of Au nanoparticles, a number of significant insights into InAs NW growth using OMVPE have been developed. Specifically, we have found that (i) the growth of InAs NWs can be initiated from a single indium (In) droplet, (ii) Au nanoparticles (NPs) enhance group V precursor (AsH3) pyrolysis but are not necessary to nucleate growth, (iii) growth of InAs NWs on SiO2 substrates occurs in the kinetically limited vapor−liquid−solid (VLS) growth regime, (iv) InAs NWs on SiO2 films decompose at elevated temperatures even under significant AsH3 overpressure, and (v) the V/III ratio is the growth-rate-limiting factor in the VLS growth of the InAs nanowires. Many of these findings on InAs NW growth can be gene...