Influence of germanium doping on the mechanical strength of Czochralski silicon wafers
Influence of germanium doping on the mechanical strength of Czochralski silicon wafers
复制标题
锗掺杂对直拉硅片机械强度的影响
DOI：
10.1063/1.2943272
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发表时间：
2008-06-15
影响因子：
3.2
通讯作者：
Gong, Longfei
中科院分区：
文献类型：
--
作者：
Chen, Jiahe;Yang, Deren;Gong, Longfei
通过在线翘曲统计分析、压痕试验和断口结构测量，研究了掺锗直拉硅（GCz-Si）晶片的机械强度。研究发现，在统计上，锗掺杂可以轻微抑制制造过程中的晶片翘曲。当锗掺杂浓度大于1018 cm-3时，锗掺杂对GCz-Si晶片机械强度的增强效果可以明显地表现出来。同时，与传统直拉（Cz-Si）晶片相比，生长态和退火后的GCz-Si晶片的断裂强度可能更大。此外，锗掺杂可以抑制Cz-Si晶片中压痕引起的位错的产生和移动。这些现象被解释通过位错钉扎效应与较小的尺寸较高密度的氧沉淀物形成在GCz-Si晶片。
The mechanical strength in germanium-doped Czochralski silicon (GCz-Si) wafers has been investigated through the on-line warpage statistics analysis, indentation tests, and fracture structure measurements. It was found that the wafer warpage during manufacturing processes could be statistically suppressed by the germanium doping slightly. The enhancement effect of germanium doping on the mechanical strength in GCz-Si wafers could be shown obviously when the germanium concentration was higher than 1018cm−3. Meanwhile, the fracture strength for both the as-grown and the postannealed GCz-Si wafers might be greater compared to that of the conventional Czochralski (Cz-Si) wafers. Moreover, the generation and mobilization of the dislocations induced by indentation in Cz-Si wafers could be suppressed by the germanium doping. These phenomena are interpreted through a dislocation pinning-up effect associated with the smaller-sized higher-density oxygen precipitates formed in GCz-Si wafers.