A Broadband On-Chip Bandpass Filter Using Shunt Dual-Layer Meander-Line Resonators
A Broadband On-Chip Bandpass Filter Using Shunt Dual-Layer Meander-Line Resonators
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DOI：
10.1109/led.2020.3027734
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发表时间：
2020-11
影响因子：
4.9
通讯作者：
K. Xu;Xi Zhu;Yang Yang-Yang;Qiang Chen
中科院分区：
文献类型：
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作者：
K. Xu;Xi Zhu;Yang Yang-Yang;Qiang Chen
提出了一种基于并联双层曲折线谐振器和多个金属-绝缘体-金属（MIM）电容的小型化宽带片上带通滤波器（BPF）。为了理解所提出的带通滤波器结构的工作机制，使用简化的LC等效电路模型进行分析，以进一步研究传输零点（TZs）的分布。为了验证所提出的想法，BPF与三个TZs实现在一个商业的0.13- $\mu \text{m}$ SiGe（Bi）-CMOS工艺。测试结果表明，该带通滤波器的中心频率为18 GHz，带宽为66.7%，通带内最小插入损耗为2.9dB。芯片（不包括GSG焊盘）约为0.318 mm × 0.392 mm。
A miniaturized broadband on-chip bandpass filter (BPF) is presented based on shunt dual-layer meander-line resonators and several metal-insulator-metal (MIM) capacitors. To understand the operational mechanism of the proposed BPF structure, it is analyzed using a simplified LC equivalent circuit model for further investigation of the transmission zeros (TZs) distributions. To validate the proposed idea, the BPF with three TZs is implemented in a commercial 0.13- $\mu \text{m}$ SiGe (Bi)-CMOS process. The measured results show that the BPF has a center frequency at 18 GHz with a very broad bandwidth of 66.7%, and the minimum insertion loss within the passband is 2.9 dB. The chip, excluding the GSG pads, is about 0.318 mm $\times0.392$ mm.