Surface Nano-Structuring of Semiconductors by Nanosecond Pulsed Laser Interference
Surface Nano-Structuring of Semiconductors by Nanosecond Pulsed Laser Interference
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DOI：
10.1109/3m-nano58613.2023.10305322
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发表时间：
2023-07
期刊：
影响因子：
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通讯作者：
Yun-Ran Wang;I. S. Han;M. Hopkinson
中科院分区：
文献类型：
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作者：
Yun-Ran Wang;I. S. Han;M. Hopkinson
在这项工作中，我们提出了一种创新的方法，纳米结构的半导体表面使用原位图案化过程。纳秒脉冲直接激光干涉图案化（DLIP）结合外延生长被引入到在快速的单次曝光步骤中在半导体上创建功能表面特征。通过使用两到四束激光，亚微米周期性纳米结构包括一维纳米光栅，二维纳米岛和纳米孔的制造，作为形成量子点的成核中心。创造周期性特征的能力提供了对所产生的量子结构的空间排列和性质的控制。该技术的这种直接和有效的性质使其在光电子学，纳米光子学和量子技术等各个领域的实际应用充满希望。
In this work, we present an innovative approach for nano-structuring semiconductor surfaces using an in-situ patterning process. Nanosecond pulsed direct laser interference patterning (DLIP) combined with epitaxial growth is introduced to create functional surface features on semiconductors in a rapid single-exposure step. By utilising two to four laser beams, submicron periodic nanostructures including 1D nano-gratings, 2D nano-islands and nano-holes are fabricated, serving as nucleation centres for the formation of quantum dots. The ability to create periodic features offers control over the spatial arrangement and properties of the resulting quantum structures. This direct and efficient nature of the technique makes it promising for practical applications in various fields, such as optoelectronics, nanophotonics and quantum technologies.