Robust localized zero-energy modes from locally embedded PT -symmetric defects
Robust localized zero-energy modes from locally embedded PT -symmetric defects
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DOI：
10.1103/physrevresearch.2.032057
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发表时间：
2020-06
影响因子：
4.2
通讯作者：
F. Mostafavi;C. Yuce;O. Magaña-Loaiza;H. Schomerus;H. Ramézani
中科院分区：
文献类型：
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作者：
F. Mostafavi;C. Yuce;O. Magaña-Loaiza;H. Schomerus;H. Ramézani
我们证明了强大的本地化零能量状态，诱导到拓扑平凡的系统插入一个PT对称缺陷与本地增益和损失的创建。当增益-损耗对比度超过某一阈值时，由缺陷引起的一对强局域态转变为零能模，在该阈值处缺陷态遇到一个例外点。我们的方法可以用来获得强大的激光或完美的吸收模式在系统的任何部分。
We demonstrate the creation of robust localized zero-energy states that are induced into topologically trivial systems by insertion of a PT-symmetric defect with local gain and loss. A pair of robust localized states induced by the defect turns into zero-energy modes when the gain-loss contrast exceeds a threshold, at which the defect states encounter an exceptional point. Our approach can be used to obtain robust lasing or perfectly absorbing modes in any part of the system.