Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
复制标题
改进型肖特基势垒 (MSB) p 沟道 FinFET 的工艺和特性
DOI：
10.1109/ted.2005.857178
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发表时间：
2005
影响因子：
3.1
通讯作者：
C. Lin
中科院分区：
文献类型：
--
作者：
Bing;C. Lin
一种新型的改进型肖特基势垒p沟道FinFET（MSB FinFET）已经成功地证明了以前。本文详细介绍了这种器件的工艺条件，特别是MSB结的形成。器件特性以及几何效应也进行了广泛的讨论。采用两步硅化和注入-硅化物技术（ITS）制备的MSB FinFET，可以在低至600/spl deg/C的温度下形成超短且无缺陷的源/漏延伸区（SOI），从而获得优异的电学特性。该超短漏极可以有效地减薄源极/沟道之间的SB宽度，或者在关断状态下加宽并提升漏极/沟道之间的SB宽度。激活能分析表明，MSB FinFET的漏电机制与传统的类似。强鳍宽度依赖的电特性也被发现在所提出的设备。当鳍片宽度变得大于硅化物晶粒尺寸时，多晶粒结构导致MSB结的粗糙前缘，这又降低了短沟道器件的性能。该结果表明MSB器件适合用作FinFET。MSB FinFET的低热预算缓解了金属栅极/高-/spl κ/电介质集成的热稳定性问题。有人认为，建议MSB FinFET是一个非常有前途的纳米器件。
A novel modified Schottky barrier p-channel FinFET (MSB FinFET) has been successfully demonstrated previously. In this paper, the detailed process conditions, especially the formation of MSB junctions, has been presented. Device characteristics as well as the geometry effect are also discussed extensively. In the MSB FinFETs fabricated by the two-step silicidation and implant-to-silicide techniques (ITS), an ultrashort and defect-free source/drain extension (SDE) could be formed at a temperature as low as 600/spl deg/C, resulting in excellent electrical characteristics. The ultrashort SDE could effectively thin out the SB width between source/channel during on-state or broaden and elevate it between drain/channel during off-state. A leakage mechanism of MSB FinFETs similar to the conventional ones was identified by the activation energy analysis. Strong fin width dependence of the electrical characteristics was also found in the proposed devices. When the fin width becomes larger than the silicide grain size, the multigrain structure results in a rough front edge of the MSB junction, which in turn degrades the short-channel device performance. This result indicates that the MSB device is suitable for use as FinFET. The low thermal budget of the MSB FinFET relaxes the thermal stability issue for metal gate/high-/spl kappa/ dielectric integration. It is considered that the proposed MSB FinFET is a very promising nanodevice.