MilliKelvin HEMT Amplifiers for Low Noise High Bandwidth Measurement of Quantum Devices.
MilliKelvin HEMT Amplifiers for Low Noise High Bandwidth Measurement of Quantum Devices.
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用于量子器件低噪声高带宽测量的 MilliKelvin HEMT 放大器。
DOI：
10.2172/1471452
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
M. Manfra
中科院分区：
文献类型：
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作者：
L. Tracy;J. Reno;T. Hargett;S. Fallahi;M. Manfra
我们展示了用于量子器件测量的超低功耗低温高电子迁移率晶体管（HEMT）放大器。低功耗（几个uW）允许放大器位于器件附近，在最冷的低温恒温器阶段（通常小于100 mK）。这样的放置最大限度地减少了寄生电容，并降低了环境噪声（例如，电缆中的摩擦电噪声）的影响，从而允许测量增益、带宽和噪声的改进。我们使用定制的高电子迁移率晶体管（HEMT）的GaAs/A1 GaAs异质结构。已知这些HEMT特别在mK温度下具有优异的性能，电子迁移率可以超过106 cm 2/Vs，从而允许以低功耗获得大增益。定制HEMT放大器在T = 4 K时的低温测量结果表明，在1 MHz带宽和5 mW功耗下，电流灵敏度为50 pA，这是对使用现成HEMT的放大器性能的改进。
We demonstrate ultra-low power cryogenic high electron mobility transistor (HEMT) amplifiers for measurement of quantum devices. The low power consumption (few uWs) allows the amplifier to be located near the device, at the coldest cryostat stage (typically less than 100 mK). Such placement minimizes parasitic capacitance and reduces the impact of environmental noise (e.g. triboelectric noise in cabling), allowing for improvements in measurement gain, bandwidth and noise. We use custom high electron mobility transistors (HEMTs) in GaAs/A1GaAs heterostructures. These HEMTs are known to have excellent performance specifically at mK temperatures, with electron mobilities that can exceed 106 cm2/Vs, allowing for large gain with low power consumption. Low temperature measurements of custom HEMT amplifiers at T = 4 K show a current sensitivity of 50 pA at 1 MHz bandwidth for 5 mW power dissipation, which is an improvement upon performance of amplifiers using off-the-shelf HEMTs.