Effect of NiO doping on microstructural and electrical properties of ZnO-based linear resistance ceramics
Effect of NiO doping on microstructural and electrical properties of ZnO-based linear resistance ceramics
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DOI：
10.1007/s10854-013-1647-7
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发表时间：
2014-02
期刊：
影响因子：
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通讯作者：
Jianfeng Zhu;Jingjing Wang;Yong Zhou;Fen Wang
中科院分区：
文献类型：
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作者：
Jianfeng Zhu;Jingjing Wang;Yong Zhou;Fen Wang
The ZnO-based linear resistance ceramics were fabricated from ZnO–Al2O3–MgO–NiO at 1,340 °C. The effect of the different doping amounts of NiO on the microstructure and electrical properties were investigated in detail. Appropriate amount of NiO addition can reduces the nonlinear property and improves the resistance temperature coefficient of the ZnO-based linear resistance ceramics obviously. The samples with the NiO concentration of 15 mol% possess an energy density of 496 J/cm3and a resistance temperature coefficient 1.15 × 10−4/°C, which are improved by 10 and 79 %, respectively. Moreover, the nonlinear coefficient of voltage decrease to 1.14, decreased by 11 % and the resistivity reaches to 43.53 Ω cm, increased by 76 %.
