Optical signatures of nitrogen acceptors in ZnO
Optical signatures of nitrogen acceptors in ZnO
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DOI：
10.1103/physrevb.85.235204
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发表时间：
2012-06
影响因子：
3.7
通讯作者：
S. Lautenschlaeger;S. Eisermann;G. Haas;E. A. Zolnowski;M. Hofmann;A. Laufer;M. Pinnisch;B. Meyer;M. R. Wagner;J. Reparaz;G. Callsen;A. Hoffmann;A. Chernikov;S. Chatterjee;V. Bornwasser;M. Koch
中科院分区：
文献类型：
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作者：
S. Lautenschlaeger;S. Eisermann;G. Haas;E. A. Zolnowski;M. Hofmann;A. Laufer;M. Pinnisch;B. Meyer;M. R. Wagner;J. Reparaz;G. Callsen;A. Hoffmann;A. Chernikov;S. Chatterjee;V. Bornwasser;M. Koch
我们报告的光学性质的氮受体掺杂的ZnO外延层中的介质和高掺杂制度，使用温度和激发功率依赖，以及时间分辨的光致发光实验。在具有不同表面极性的ZnO单晶衬底上同质外延生长时，对外延层进行了氨掺杂。在非极性a-平面，极性c-平面Zn面衬底和极性c-平面O面衬底上生长的外延层的光学特性之间观察到显着差异，这表明根据衬底极性不同的氮受体的掺入。通过二次离子质谱法测得ZnO薄膜中氮的掺杂量在1019 ~ 1021 cm-3之间，在此掺杂范围内，样品从轻掺杂补偿到高掺杂补偿。我们讨论了氮掺杂ZnO外延层的浅施主-受主对复合的概念内的独特的光致发光功能，并在最高掺杂水平的外观电位波动。
We report on the optical properties of nitrogen acceptor-doped ZnO epilayers in the medium and high doping regimes using temperature and excitation power-dependent, as well as time-resolved photoluminescence experiments. The epilayers were doped with ammonia during homoepitaxial growth on ZnO single-crystal substrates with different surface polarities. Significant differences in the optical characteristics of the epilayers are observed between growth on nonpolar a-plane, polar c-plane Zn-face substrates and polar c-plane O-face substrates, which demonstrates different incorporation of the nitrogen acceptor depending on the substrate polarity. The incorporation of nitrogen into the ZnO films ranges between 1019 and 1021 cm−3 as determined by secondary ionmass spectrometry.Within this doping range the samples change from lightly compensated to highly doped compensated. We discuss the unique photoluminescence features of nitrogen-doped ZnO epilayers within the concept of shallow donor-acceptor-pair recombinations and at the highest doping level by the appearance of potential fluctuations.