Determination of minority carrier lifetimes in CuInSe2 thin films
Determination of minority carrier lifetimes in CuInSe2 thin films
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CuInSe2 薄膜中少数载流子寿命的测定
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
H. Schock
中科院分区：
文献类型：
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作者：
K. Puech;S. Zott;K. Leo;M. Ruckh;H. Schock
我们提出了详细的测量CuInSe 2薄膜中的载流子寿命。时间分辨的光致发光测量在Cu/In比率具有横向梯度的多晶样品上进行，从而能够连续评估寿命对膜成分的依赖性。在两个不同的光谱位置观察到发光：一个高能量的发射，归因于自由载流子或自由激子复合（取决于组成），其衰减非常快，寿命为几十皮秒到几纳秒;一个较低的能量发射，来自缺陷相关的复合，其衰减慢得多，典型的寿命大于几十纳秒。我们将这些结果与CuInGaSe 2薄膜的结果进行了比较。辐射系数和少数载流子寿命从数据中获得。
We present detailed measurements of carrier lifetimes in CuInSe2 thin films. Time‐resolved photoluminescence measurements are performed on polycrystalline samples grown with a lateral gradient in the Cu/In ratio, thus enabling continuous evaluation of lifetime dependence on film composition. Luminescence at two distinct spectral positions is observed: A high energy emission, attributed to free carrier or free exciton recombination (depending on composition), that decays extremely fast with a lifetime of tens of picoseconds to a few ns; a lower energy emission from defect related recombination that decays much more slowly, with typical lifetimes greater than tens of nanoseconds. We compare these results with results from CuInGaSe2 films. Radiative coefficients and minority carrier lifetimes are obtained from the data.