Enhanced magnetic valve effect and magneto-Coulomb oscillations in ferromagnetic single electron transistor
Enhanced magnetic valve effect and magneto-Coulomb oscillations in ferromagnetic single electron transistor
复制标题
铁磁单电子晶体管中的增强磁阀效应和磁库仑振荡
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
Y. Ootuka
中科院分区：
文献类型：
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作者：
K. Ono;H. Shimada;Y. Ootuka
本文报道了铁磁单电子晶体管（SET）的磁输运性质，在SET中，由于磁阀效应，隧道电阻RT变化约3.6-3.8%.我们发现在库仑阻塞区磁阀效应增强：关态的磁电阻比大于40%，而导通态的磁电阻比为4.0%。提出了高阶隧穿过程增强的机制。此外，我们还发现了磁场引起的库仑振荡的单调相移，这导致了在固定栅压下的磁库仑振荡。基于磁场引起的岛电极中自旋极化电子费米能的变化，给出了这种效应的一个简单解释。
We report on magnetotransport properties of a ferromagnetic single electron transistor (SET) in which tunnel resistance R T changes about 3.6-3.8% by the magnetic valve effect. We find that the magnetic valve effect is enhanced in the Coulomb blockade region: The magnetoresistance (MR) ratio of the off-state of the SET is more than 40%, while that of the on-state is 4.0%. A mechanism of enhancement by the higher-order tunneling process is proposed. Furthermore, we find a monotonic phase shift of the Coulomb oscillations induced by the magnetic field, which results in magneto-Coulomb oscillations with fixed gate voltage. A simple explanation for this effect based on a magnetic-field-induced change in the Fermi energy of the spin-polarized electrons in an island electrode is given.