High speed single photon detection in the near infrared
High speed single photon detection in the near infrared
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DOI：
10.1063/1.2760135
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发表时间：
2007-07-23
影响因子：
4
通讯作者：
Shields, A. J.
中科院分区：
文献类型：
--
作者：
Yuan, Z. L.;Kardynal, B. E.;Shields, A. J.
InGaAs雪崩光电二极管(APD)可以方便地在近红外(包括1.31/1.55微米的光纤通信频段)进行单光子探测。然而，为了抑制捕获雪崩电荷引起的后脉冲噪声，它们必须以兆赫的重复频率选通，从而严重限制了近红外应用中的计数速率。在这里，作者展示了InGaAsAPD的选通频率远远超过1 GHz。使用一种自差分技术来检测更弱的雪崩，作者大大减少了后脉冲噪声。在1.25 GHz频率下，获得了10.8%的探测效率和6.16%的后脉冲概率。此外，该探测器具有低抖动(55ps)和100 MHz的计数速率。
InGaAs avalanche photodiodes (APDs) are convenient for single photon detection in the near infrared (NIR) including the fiber communication bands (1.31/1.55 mu m). However, to suppress afterpulse noise due to trapped avalanche charge, they must be gated with megahertz repetition frequencies, thereby severely limiting the count rate in NIR applications. Here, the authors show gating frequencies for InGaAs APDs well beyond 1 GHz. Using a self-differencing technique to sense much weaker avalanches, the authors reduce drastically afterpulse noise. At 1.25 GHz, they obtain a detection efficiency of 10.8% with an afterpulse probability of 6.16%. In addition, the detector features low jitter (55 ps) and a count rate of 100 MHz.