A Globally Convergent Gummel Map for Optimal Dopant Profiling
A Globally Convergent Gummel Map for Optimal Dopant Profiling
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DOI：
10.1142/s0218202509003619
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发表时间：
2009-05
影响因子：
3.5
通讯作者：
M. Burger;R. Pinnau
中科院分区：
文献类型：
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作者：
M. Burger;R. Pinnau
我们研究了一个广义Gummel迭代的解决方案的一个抽象的最佳半导体设计问题，其中涵盖了广泛的半导体模型。该算法是利用KKT系统的特殊结构，它可以被解释为一个适当定义的成本函数的下降算法。这允许不需要假设小偏置电压的收敛证明。该算法是明确规定的（量子）漂移扩散模型，能量传输模型和微观薛定谔泊松模型。
We study a generalized Gummel iteration for the solution of an abstract optimal semiconductor design problem, which covers a wide range of semiconductor models. The algorithm is to exploit the special structure of the KKT system and it can be interpreted as a descent algorithm for an appropriately defined cost functional. This allows for a convergence proof which does not need the assumption of small biasing voltages. The algorithm is explicitly stated for the (quantum) drift diffusion model, the energy transport model and the microscopic Schrodinger–Poisson model.