Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes
Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes
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DOI：
10.1016/j.sse.2010.06.002
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发表时间：
2010-11-01
影响因子：
1.7
通讯作者：
Dhagat, Pallavi
中科院分区：
文献类型：
--
作者：
Jander, Albrecht;Dhagat, Pallavi
分析了利用硅二极管中的自旋相关复合(SDR)实现的传感器的磁场灵敏度。根据目前二极管中的自旋相关复合理论和散粒噪声理论，预测常规的硅二极管可以用作谐振式磁场传感器中的探测器，在1 Hz的带宽内分辨率优于3µT，足以应用于罗盘、电流传感、位置传感器和非接触式开关等应用。针对最大SDR响应进行优化的半导体器件理论上将达到1nT量级的分辨率。(C)2010爱思唯尔有限公司。保留所有权利。
An analysis of the magnetic field sensitivity that could be achieved in a sensor utilizing spin-dependent recombination (SDR) in silicon diodes is presented. Based on current theories of spin-dependent recombination and shot noise in diodes it is predicted that conventional silicon diodes may be used as detectors in a resonant magnetic field sensors with better than 3 mu T resolution in a 1 Hz bandwidth - adequate for applications such as compassing, current sensing, position sensors and non-contact switches. A semiconductor device optimized for maximum SDR response will theoretically achieve a resolution on the order of 1 nT. (C) 2010 Elsevier Ltd. All rights reserved.