Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy
Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy
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金属有机气相外延生长的室温 GaAs/AlGaAs 量子级联激光器
DOI：
10.1109/lpt.2011.2138124
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发表时间：
2011
影响因子：
2.6
通讯作者：
J. Cockburn
中科院分区：
文献类型：
--
作者：
A. Krysa;D. Revin;J. P. Commin;C. Atkins;K. Kennedy;Y. Qiu;T. Walther;J. Cockburn
我们演示了λ ~ 9 μm GaAs/Al0.45Ga0.55As量子级联激光器（qcl），工作温度高达320 K。金属-有机气相外延一直被用于器件的生长。对具有不同波导和生长在（100）GaAs衬底上的具有不同向（111）A错切角的qcl进行了详细的比较。与基于gaas的波导相比，引入InGaP包层的光波导具有更好的光约束和更低的波导损耗，从而显着提高了QCL性能。该器件宽20 μm，长4 mm，激光器背面有高反射率涂层，室温脉冲输出功率为220 mW，阈值电流密度为6.5 kA/cm2。
We demonstrate λ ~ 9 μm GaAs/Al0.45Ga0.55As quantum cascade lasers (QCLs) operating up to 320 K. Metal- organic vapor phase epitaxy has been used throughout for the growth of the devices. Detailed comparison has been carried out for the QCLs with various waveguides and grown on (100) GaAs substrates with different miscut angles towards (111)A. Introduction of InGaP cladding layers into the optical waveguide significantly improves the QCL performance due to a better optical confinement and lower waveguide losses compared with the GaAs-based waveguide. A 20- μm-wide 4-mm-long device with high reflectivity coating on the laser back facet demonstrates room-temperature pulsed output power of 220 mW and a lowered threshold current density of 6.5 kA/cm2.