Temperature dependence of solar cell performance-an analysis
Temperature dependence of solar cell performance-an analysis
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DOI：
10.1016/j.solmat.2012.02.019
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发表时间：
2012-06-01
影响因子：
6.9
通讯作者：
Ravindra, N. M.
中科院分区：
文献类型：
--
作者：
Singh, Priyanka;Ravindra, N. M.
本文从理论上研究了273-523 K温度范围内太阳电池性能的温度依赖性。太阳能电池的性能由其参数决定，即，短路电流密度（J（sc））、开路电压（V-oc）、填充因子（FF）和效率（η）。这里考虑基于半导体材料如Ge、Si、GaAs、InP、CdTe和CdS的太阳能电池。反向饱和电流密度（J（o））是控制性能参数随温度变化的重要二极管参数。本文测定了三种情况下的反向饱和电流密度（J（o）=C.T-3.exp（-qE（g）/kT））。情况（I）和（II）分别对应于C=17.90和50 mA cm（-2）K-3，而情况（III）对应于C.T-3=A=1.5 x 10（8）mA cm（-2）。计算了AM1.5G和AM 0光谱下太阳电池的最大可实现V-oc、J（sc）、FF和η，并与文献中的理论和实验结果进行了比较。对于情况（III）实现了最高的V-oc、FF和eta。对于基于材料Si、Ge、GaAs的太阳能电池，情况（III）的电池性能给出了计算的和可用的理论和实验数据之间的最佳一致性，而对于InP、CdTe和CdS，情况（I）似乎在298 K下更合适。此外，随着温度的变化，情况（I）和（II）更适合描述太阳能电池的性能。性能参数随温度的变化率，即，计算了dJ（sc）/dT、dV（oc）/dT、dFF/dT和deta/dT，并与文献数据进行了比较。除了理论结果，实验确定的硅太阳能电池的性能参数和它们随温度的变化率。(C)2012爱思唯尔有限公司版权所有。
This paper investigates, theoretically, the temperature dependence of the performance of solar cells in the temperature range 273-523 K. The solar cell performance is determined by its parameters, viz., short circuit current density (J(sc)), open circuit voltage (V-oc), fill factor (FF) and efficiency (eta). Solar cells based on semiconductor materials such as Ge, Si, GaAs, InP, CdTe and CdS are considered here. Reverse saturation current density (J(o)) is an important diode parameter which controls the change in performance parameters with temperature. In this work, reverse saturation current density (J(o)=C.T-3.exp (-qE(g)/kT)) is determined for three cases. Cases (I) and (II) correspond to C=17.90 and 50 mA cm(-2) K-3 respectively, whereas, case (III) corresponds to C.T-3=A=1.5 x 10(8) mA cm(-2). The maximum achievable V-oc, J(sc), FF and eta of solar cells are calculated for AM1.5G and AM0 spectra and are compared with theoretical and experimental results in the literature. Highest V-oc, FF and eta are achieved for case (III). The performance of cells for case (III) gives the best agreement between the calculated and available theoretical and experimental data for solar cells based on the materials, Si, Ge, GaAs whereas, for InP, CdTe and CdS, case (I) seems to be more appropriate at 298 K. Moreover, as temperature changes, cases (I) and (II) are more suitable to describe the performance of solar cells. The rate of change of performance parameters with temperature, viz., dJ(sc)/dT, dV(oc)/dT, dFF/dT and d eta/dT are calculated and compared with the available data in the literature. In addition to theoretical results, the experimentally determined performance parameters of silicon solar cells and their rate of change with temperature are also presented. (C) 2012 Elsevier B.V. All rights reserved.