Nitrogen doping in camphoric carbon films and its application to photovoltaic cell
Nitrogen doping in camphoric carbon films and its application to photovoltaic cell
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DOI：
10.1142/s0218625x0500672x
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发表时间：
2005-02
影响因子：
1.1
通讯作者：
M. Rusop;M. Mominuzzaman;T. Soga;T. Jimbo;M. Umeno
中科院分区：
文献类型：
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作者：
M. Rusop;M. Mominuzzaman;T. Soga;T. Jimbo;M. Umeno
采用脉冲激光沉积技术在石英和单晶硅衬底上沉积了碳膜。目标的烟灰是从燃烧樟脑中获得的，樟脑是一种天然来源。本文研究了氮（N）掺入对热解碳膜性能的影响。未掺杂膜的光学带隙为约0.95 eV。对于低N含量，光学带隙保持不变，并减小到约0.7 eV。随着N含量的增加，光学带隙增大。碳膜的电阻率随N含量增加，最初随较高的N含量降低，直到在30毫托下沉积的膜。结果表明，在低氮含量下沉积的薄膜成功掺杂。观察到在光照下N掺入的碳/硅光伏电池的J-V特性在碳层中N掺入后得到改善。
Carbon films have been deposited on quartz and single-crystal silicon substrates by pulsed laser deposition technique. The soot for the target was obtained from burning camphor, a natural source. The effect of nitrogen (N) incorporation in camphoric carbon film is investigated. Optical gap for the undoped film is about 0.95 eV. The optical gap remains unchanged for low N content and decreases to about 0.7 eV. With higher N content, the optical gap increases. The resistivity of the carbon film increases with N content, initially and decreases with higher N content up till the film that is deposited at 30 mTorr. The results indicate successful doping for the film deposited at low nitrogen content. The J–V characteristics of N-incorporated carbon/silicon photovoltaic cells under illumination are observed to improve upon N-incorporation in the carbon layer.