Multidimensional SPM applied for nanoscale conductance mapping
Multidimensional SPM applied for nanoscale conductance mapping
复制标题
DOI：
10.1557/jmr.2013.365
复制
发表时间：
2013-12
影响因子：
2.7
通讯作者：
J. Bosse;Ilja Grishin;O. Kolosov;B. Huey
中科院分区：
文献类型：
--
作者：
J. Bosse;Ilja Grishin;O. Kolosov;B. Huey
基于多维原子力显微镜（AFM），发展了一种新的纳米电导成像（NCM）方法，以有效地研究异质表面的纳米尺度电学性质。该技术使用一系列导电AFM图像，所有图像都在单个区域中获取，但每个图像都具有递增的较高施加电压。这产生了一个矩阵的电流与电压（I-V）光谱，提供纳米级地图的电导和电流的非线性与可忽略的空间漂移。对于GeSe硫族化物相变膜的结晶相和非晶相，电导和特征非晶相“开启”电压被映射，其结果提供传统的逐点I-V测量，但是获得速度快数百倍。虽然类似于扫描隧道显微镜中的电流成像隧道光谱，但NCM技术不需要导电样品。因此，它是一个有前途的方法，用于传感器，电阻存储器和光电传感器中使用的异质材料的有效，定量的电子调查。
A new approach has been developed for nanoscale conductance mapping (NCM) based on multidimensional atomic force microscopy (AFM) to efficiently investigate the nanoscale electronic properties of heterogeneous surfaces. The technique uses a sequence of conductive AFM images, all acquired in a single area but each with incrementally higher applied voltages. This generates a matrix of current versus voltage ( I - V ) spectra, providing nanoscale maps of conductance and current nonlinearities with negligible spatial drift. For crystalline and amorphous phases of a GeSe chalcogenide phase change film, conductance and characteristic amorphous phase “turn-on” voltages are mapped with results providing traditional point-by-point I - V measurements, but acquired hundreds of times faster. Although similar to current imaging tunneling spectroscopy in a scanning tunneling microscope, the NCM technique does not require conducting specimens. It is therefore a promising approach for efficient, quantitative electronic investigations of heterogeneous materials used in sensors, resistive memories, and photovoltaics.