Carrier transport and its variation of laser-lateral-crystallized poly-Si TFTs
Carrier transport and its variation of laser-lateral-crystallized poly-Si TFTs
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激光横向晶化多晶硅TFT的载流子输运及其变化
DOI：
10.1049/el.2011.2854
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发表时间：
2011
影响因子：
1.1
通讯作者：
S.Kuroki
中科院分区：
文献类型：
--
作者：
平敬;本間貴士;内山貴之;斎木敏治;S.Kuroki
研究了连续波激光横向结晶(CLC)多晶硅薄膜晶体管(TFT)中的载流子输运。激光晶化形成的大颗粒硅，增强了CLC多晶硅TFT的电子迁移率。结果表明，有效电子迁移率不受晶界散射的影响，主要受声子散射的影响，但其变化受沟道区颗粒数的影响。
Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.