Root-growth mechanism for single-wall carbon nanotubes
Root-growth mechanism for single-wall carbon nanotubes
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DOI：
10.1103/physrevlett.87.275504
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发表时间：
2001-12-31
影响因子：
8.6
通讯作者：
Charlier, JC
中科院分区：
文献类型：
--
作者：
Gavillet, J;Loiseau, A;Charlier, JC
用高分辨透射电子显微镜研究了单壁碳纳米管的催化生长。从不同的技术合成的样品之间的相似性表明一个共同的增长机制的基础上的气-液-固模型。量子分子动力学模拟支持的根生长机制，其中碳原子被纳入管基地的扩散-偏析过程。
The catalytic growth of single-wall carbon nanotubes is investigated by high-resolution transmission electron microscopy. The similarities between the samples synthesized from different techniques suggest a common growth mechanism based on a vapor-liquid-solid model. Quantum-molecular-dynamics simulations support a root growth mechanism where carbon atoms are incorporated into the tube base by a diffusion-segregation process.