Fast etching of copper in thionyl chloride/acetonitrile solutions
Fast etching of copper in thionyl chloride/acetonitrile solutions
复制标题
在亚硫酰氯/乙腈溶液中快速蚀刻铜
DOI：
10.1016/j.corsci.2011.06.031
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发表时间：
2011
影响因子：
8.3
通讯作者：
C. Wong
中科院分区：
文献类型：
--
作者：
Wei Lin;C. Wong
本文报道了在亚硫酰氯（SOCl_2）/乙腈（CH_3CN）溶液中铜（Cu）的快速腐蚀。通过改变蚀刻剂的浓度和液体的搅拌速率，可以在宽范围内调节蚀刻速率。在室温下搅拌下，在1 molL − 1 SOCl 2/CH 3CN中的蚀刻速率达到36 mgmin −1cm− 2，这比目前使用的任何Cu蚀刻剂都要快得多。在超声处理下，蚀刻速率达到320 mgmin −1cm−2。用X射线光电子能谱和拉曼光谱研究了所涉及的化学反应。快速腐蚀在微电子学中有重要的应用。
We report fast etching of copper (Cu) in thionyl chloride (SOCl2)/acetonitrile (CH3CN) solutions. The etching rate can be tuned over a wide range by varying the concentration of the etchant, and the stirring rate of the liquid. The etching rate reaches 36mgmin−1cm−2in 1molL−1SOCl2/CH3CN under stirring at room temperature, which is much faster than any currently used etchant for Cu. With sonication, the etching rate reaches 320mgmin−1cm−2. The chemical reactions involved are studied by X-ray photoelectron spectroscopy and Raman spectroscopy. The fast etching may find important applications in microelectronics.