Thermally Enhanced Co-Tunneling of Single Electrons in a Si Quantum Dot at 4.2 K
Thermally Enhanced Co-Tunneling of Single Electrons in a Si Quantum Dot at 4.2 K
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4.2 K 下硅量子点中单电子的热增强共隧道
DOI：
10.1143/jjap.34.1326
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发表时间：
1995
影响因子：
1.5
通讯作者：
Shin'ichiro Kimura Shin'ichiro Kimura
中科院分区：
文献类型：
--
作者：
H. Matsuoka;Shin'ichiro Kimura Shin'ichiro Kimura
研究了4.2K下a-Si量子点的输运性质。通过在窄沟道中引入可控的隧道势垒，在双栅结构的硅金属氧化物半导体场效应晶体管（Si-MOSFET）的反型层中实现了量子点。由于单电子充电效应的周期性电流振荡已被观察到。随着隧穿势垒高度的增加，I-V特性曲线中出现了库仑能隙。此外，在库仑阻塞制度的漏电流随偏压线性变化，这是定量描述的非弹性共隧穿理论在有限温度下。
Transport properties of a Si quantum dot at 4.2 K have been studied. A quantum dot is realized in the inversion layer of a Si metal-oxide-semiconductor field-effect-transistor (Si-MOSFET) with a dual-gate structure by introducing controllable tunnel barriers in the narrow channel. Periodic current oscillations due to the single-electron charging effect have been observed. With increasing tunnel barrier heights, Coulomb gaps appear in the I-V characteristics. Furthermore, leakage current in the Coulomb blockade regime varies linearly with bias voltage, which is quantitatively described in terms of the inelastic co-tunneling theory at finite temperatures.