Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory
Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory
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DOI：
10.1143/apex.3.091101
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发表时间：
2010-08
影响因子：
2.3
通讯作者：
Jaehoon Song;A. Inamdar;B. Jang;Ki-Young Jeon;Youngsam Kim;Kyooho Jung;Yongmin Kim;H. Im;Woong Jung;H. Kim;J. Hong
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文献类型：
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作者：
Jaehoon Song;A. Inamdar;B. Jang;Ki-Young Jeon;Youngsam Kim;Kyooho Jung;Yongmin Kim;H. Im;Woong Jung;H. Kim;J. Hong
我们制备了电阻开关Al-AlOx多层结，并观察到显著改善的耐久性能。观察到的电阻转换机制基本上反映了灯丝模型。各阻态输运的温度依赖关系揭示了另外的特征，即在层状器件中没有观察到在高阻状态下的明确的热激活行为，在低阻状态下的金属导电性也没有受到影响。根据增加的有效有源区数量来讨论改进的耐久性能，其中重置和设置过程可能发生在永久介电击穿之前。
We prepared resistive switching Al–AlOx multilayered junctions and observed considerably improved endurance properties. The mechanism of the observed resistance switching basically reflects the filament model. The temperature dependence of the transport in each resistance state revealed additional features, that is a well-defined thermal activation behavior in the high-resistance state is not observed in the layered device and the metallic conduction in the low-resistance state is not affected. The improved endurance properties are discussed in terms of the increased effective number of active regions, where the Reset and Set processes probably occur before a permanent dielectric breakdown.