Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers
Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers
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DOI：
10.1063/1.1494466
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发表时间：
2002-07
影响因子：
4
通讯作者：
Xiangyang Ma;Xuegong Yu;Ruixin Fan;Deren Yang
中科院分区：
文献类型：
--
作者：
Xiangyang Ma;Xuegong Yu;Ruixin Fan;Deren Yang
采用扩展电阻法研究了掺硼p型含氮直拉硅片经一步高温（1150 °C）退火和450 °C长时间退火后的载流子浓度分布。结果表明，载流子浓度分布具有pnp双极结构的特征，而经相同热处理的p型直拉硅控制片的载流子浓度分布则具有p-n结的特征。此外，它建议，只有一个步骤的高温退火是一个有效的方法，由于在近表面区域的氧和氮的外扩散和氮增强的氧沉淀在体区域的含氮直拉硅晶片的本征吸杂。
The carrier concentration profile in boron-doped p-type nitrogen-containing Czochralski silicon wafer subjected to a one-step high-temperature (1150 °C) annealing followed by a prolonged 450 °C annealing has been investigated by spreading resistance profile. It is found that the carrier concentration profile is characteristic of a pnp bipolar structure, while, that in the control wafer of p-type conventional Czochralki silicon subjected to the identical thermal treatment is just characteristic of a p-n junction. Moreover, it is suggested that only one-step annealing at high temperatures is an efficient method for intrinsic gettering of a nitrogen-containing Czochralski silicon wafer due to the outdiffusion of oxygen and nitrogen in the near-surface region and the nitrogen-enhanced oxygen precipitation in the bulk region.