Electromigration behavior of hot-sputtered Al(Cu) versus chemical vapor deposition W vias
Electromigration behavior of hot-sputtered Al(Cu) versus chemical vapor deposition W vias
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热溅射 Al(Cu) 与化学气相沉积 W 通孔的电迁移行为
DOI：
10.1116/1.589381
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
K. Rodbell
中科院分区：
文献类型：
--
作者：
R. Filippi;E. Levine;K. Rodbell
比较了热溅射铝铜（Al-Cu）过孔和化学气相沉积（CVD）钨（W）过孔的电迁移行为。Al（Cu）通孔通过以下两种工艺之一制备：（1）填充通孔，然后通过化学机械抛光（CMP）限定通孔，以及（2）在同一步骤中沉积通孔和顶部金属线（这被称为“Sprint”工艺）。在电迁移测试期间，W通孔链比CMP Al（Cu）通孔链表现出更均匀的电阻随时间的变化。这对对数正态寿命分布的形状参数有直接影响，其中CMP Al（Cu）通孔链的σ较高。一个更仔细的检查的故障分布揭示了需要描述CMP Al（Cu）通过寿命由三参数对数正态分布，而不是传统的两参数对数正态分布。CMP Al（Cu）样品的失效分析表明，电迁移失效从通孔下游的方向上的电…
The electromigration behavior of hot-sputtered aluminum-copper (Al-Cu) vias is compared to that of chemical vapor deposition (CVD) tungsten (W) vias. Al(Cu) vias were prepared by one of two processes: (1) the via was filled and then defined by chemical mechanical polish (CMP) and (2) the via and top metal line were deposited in the same step (this is referred to as the “Sprint” process). During electromigration testing, the W via chains exhibited more uniform resistance changes with time than the CMP Al(Cu) via chains. This had a direct impact on the shape parameter of the log-normal lifetime distribution, where σ was higher for the CMP Al(Cu) via chains. A closer examination of the failure distributions revealed the need to describe the CMP Al(Cu) via lifetimes by a three-parameter log-normal distribution as opposed to the conventional two-parameter log-normal distribution. Failure analysis of the CMP Al(Cu) samples indicated electromigration failures downstream from the via in the direction of the elect...