Preparation of p-type ZnO Films by Alternate Deposition of ZnO and Mg3N2 Films
Preparation of p-type ZnO Films by Alternate Deposition of ZnO and Mg3N2 Films
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DOI：
10.1016/j.proeng.2012.03.062
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Kenkichiro Kobayashi;T. Koyama;Xinyo Zhang;Yoshiumi Kohono;Y. Tomita;Y. Maeda;S. Matsushima
中科院分区：
文献类型：
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作者：
Kenkichiro Kobayashi;T. Koyama;Xinyo Zhang;Yoshiumi Kohono;Y. Tomita;Y. Maeda;S. Matsushima
通过在N2 + 0.2%O2的气氛中交替沉积ZnO和Mg3 N2膜，在100°C下加热的玻璃衬底上沉积膜。在50- 70 W的功率下，用Mg_3N_2溅射0.2s，生长出电阻率为9.9×103 - 4.5×103Ωcm的p型ZnO薄膜，而在90 W的功率下，用Mg_3N_2溅射0.2s，生长出电阻率为9.9×103 - 4.5×103Ωcm的n型ZnO薄膜。n型ZnO膜的出现是由于大气中O2分压的降低而引起的。在这些p型和n型ZnO薄膜中发现由于Mg原子的掺入而导致的c轴的收缩。当Mg_3N_2沉积周期延长到5s时，在50 W的交替溅射中生长出p型ZnO薄膜，而在70 W的交替溅射中只生长出绝缘体薄膜。薄膜的光学带隙随着射频功率和Mg3 N2沉积时间的增加而增加。
Films were deposited on a glass substrates heated at 100°C by alternate deposition of ZnO and Mg3N2 films in an atmosphere of N2 + 0.2% O2. p-type ZnO films with the resistivity of 9.9×103 - 4.5×103Ωcm were grown by Mg3N2 sputtering for 0.2s at 50-70W, whereas an n-type ZnO film was grown for 0.2s at 90W. Appearance of the n-type ZnO film is caused by a decrease of O2-partial pressure in an atmosphere. The contraction of the c-axis due to the incorporation of Mg atoms is found in these p-type and n-type ZnO films. When the Mg3N2-depostion period was extended to 5s, p-type ZnO films were grown in the alternate sputtering at 50W, whereas only insulator films were grown in the alternate sputtering at 70W. The optical band gap of the films increases with both a RF power and a period of Mg3N2-deposition.