On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors
On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors
复制标题
金属氧化物半导体场效应晶体管边缘直接隧道电流的开关
DOI：
10.1063/1.1518563
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
Ming
中科院分区：
文献类型：
--
作者：
Ming;Ming
在低电压（−1.40 V<VG<−0.88 V）边缘直接隧穿电流下，测量了n沟道金属氧化物半导体场效应晶体管（10 A氧化物+10 A氮化物）的通断开关行为或两电平随机电报信号（RTS）。合理的起源是工艺引起的缺陷，在局部栅极叠层变薄（或等效的导电丝）。在这种外在的情况下，目前的陷阱-去陷阱理论可以充分解释的数据，特别是RTS幅度高达18%。与某个缺陷点的电流-电压特性进行了直接评估，显示出显着的兼容性与现有的氧化物减薄的情况。终端电流中RTS的系统测量允许确定缺陷的发生概率以及位置，并且可以被视为敏感的过程监控器。
On–off switching behaviors or two-level random telegraph signals (RTS) are measured in the low voltage (−1.40 V<VG<−0.88 V) edge direct tunneling currents in ultrathin gate stack (10 A oxide+10 A nitride) n-channel metal-oxide-semiconductor field-effect transistors. The plausible origin is the process-induced defects in terms of localized gate stack thinning (or equivalently the conductive filament). In such extrinsic case, the current trapping–detrapping theories can adequately elucidate the data, particularly the RTS magnitude as large as 18%. The current–voltage characteristic associated with a certain defective spot is assessed straightforwardly, showing remarkable compatibility with existing oxide thinning case. Systematic measurements of RTS in the terminal currents allow for determining the occurrence probability as well as locations of defects, and may be treated as a sensitive process monitor.