Enhanced photovoltaic properties in graphene/polycrystalline BiFeO3/Pt heterojunction structure
Enhanced photovoltaic properties in graphene/polycrystalline BiFeO3/Pt heterojunction structure
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DOI：
10.1063/1.3644134
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发表时间：
2011-09
影响因子：
4
通讯作者：
Yongyuan Zang;D. Xie;Xiao Wu;Yu Chen;Yuxuan Lin;Mohan Li;H. Tian;Xiao Li;Zhen Li;
中科院分区：
文献类型：
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作者：
Yongyuan Zang;D. Xie;Xiao Wu;Yu Chen;Yuxuan Lin;Mohan Li;H. Tian;Xiao Li;Zhen Li;
我们报道了石墨烯作为上电极的多晶BiFeO 3（BFO）薄膜的增强光伏特性。测得异质结的短路电流密度（Jsc）和开路电压分别为25 μA/cm 2和0.44 V，远高于以氧化铟锡（ITO）为顶电极的多晶BFO的报道值。研究了HNO 3处理对薄膜光伏性能的影响，光电流密度从25 μA/cm ~ 2提高到2.8mA/cm ~ 2。提出了一个金属-本征载流子-金属模型来解释石墨烯相对于传统ITO的增强效应。
We report the enhanced photovoltaic properties in polycrystalline BiFeO3 (BFO) thin films with graphene as top electrodes. The short circuit current density (Jsc) and open circuit voltage of the heterojunction are measured to be 25 μA/cm2 and 0.44 V, respectively, much higher than the reported values for polycrystalline BFO with indium tin oxide (ITO) as top electrodes. Influence of HNO3 treatment on the photovoltaic properties is studied, and a significant photocurrent density improvement from 25 μA/cm2 to 2.8 mA/cm2 is observed. A metal-intrinsic semiconductor-metal model is proposed to explain the graphene induced enhancement comparing with traditional ITO.