Coalescence induced dislocation reduction in selectively grown lattice-mismatched heteroepitaxy: Theoretical prediction and experimental verification
Coalescence induced dislocation reduction in selectively grown lattice-mismatched heteroepitaxy: Theoretical prediction and experimental verification
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DOI：
10.1063/1.5011421
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发表时间：
2018-05
影响因子：
3.2
通讯作者：
M. Yako;Y. Ishikawa;K. Wada
中科院分区：
文献类型：
--
作者：
M. Yako;Y. Ishikawa;K. Wada
本文提出了一种降低晶格失配异质外延中穿透位错密度的方法，并在实验上验证了这种降低。平顶外延层通过非平面选择性生长外延层的聚结形成，并且使得能够在像力方面减小TDD。数值计算和对Ge on Si的实验验证了该方法的有效性。该方法不仅适用于Ge on Si异质外延，也适用于其它晶格失配异质外延，如III-V族异质外延。提出了一种降低晶格失配异质外延中穿透位错密度（TDD）的方法，并对Ge on Si异质外延进行了实验验证。平顶外延层通过非平面选择性生长外延层的聚结形成，并且使得能够在像力方面减小TDD。数值计算和对Ge on Si的实验验证了该方法的有效性。该方法不仅适用于Ge on Si，而且适用于其他晶格失配的异质外延，如III-V on Si。
A method for reduction of threading dislocation density (TDD) in lattice-mismatched heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched heteroepitaxy such as III-V on Si.A method for reduction of threading dislocation density (TDD) in lattice-mismatched heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched heteroepitaxy such as III-V on Si.