Microstructured ZnO photoelectrode grown on the sputter-deposited ZnO passivating-layer for improving the photovoltaic performances
Microstructured ZnO photoelectrode grown on the sputter-deposited ZnO passivating-layer for improving the photovoltaic performances
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DOI：
10.1016/j.matchemphys.2010.07.052
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发表时间：
2010-12
影响因子：
4.6
通讯作者：
Md. Faruk Hossain;T. Takahashi
中科院分区：
文献类型：
--
作者：
Md. Faruk Hossain;T. Takahashi
本研究的目的是利用薄ZnO钝化层和微盘/环结构ZnO光电极来提高染料敏化太阳能电池（DSC）的光伏性能。采用面靶溅射技术在SnO2:F （FTO）衬底上制备了一层薄薄的ZnO钝化层，防止了DSC过程中的短路和电解质与FTO衬底直接接触导致的电子反转移。采用简单的溶胶-凝胶法在ZnO钝化层上成功生长出微结构ZnO光电极，并分别添加0.5、1.0、1.5、2.0g聚乙二醇（PEG）。用场发射二次电子显微镜和原子力显微镜对ZnO薄膜的结构进行了验证。DSC由钌基染料、微结构ZnO薄膜、KI/ i2基电解质和碳对电极组装而成。ZnO钝化层的存在提高了dsc的光电压和填充系数。随着PEG含量的增加，DSC的光电流、光电压和光电转换效率均增加。用2.0g PEG制备的ZnO薄膜的DSC显示，在100mWcm−2光强下，最高效率为1.83%，光电压为463mV，光电流为7.2mAcm−2。
The aim of this work is to improve the photovoltaic performance of dye-sensitized solar cell (DSC) using a thin ZnO passivating-layer and micro-disc/ring structured ZnO photoelectrodes. A thin ZnO passivating-layer is prepared on the SnO2:F (FTO) substrate by facing-target sputtering technique, which prevents the short-circuit in DSC, and back-transfer of electron due to the direct-contact between the electrolyte, and the FTO substrate. Microstructured ZnO photoelectrodes are successfully grown on thin ZnO passivating-layer by a simple sol–gel process without and with 0.5, 1.0, 1.5, 2.0g of polyethylene glycol (PEG) contents. The micro-disc/ring structured ZnO films have confirmed by field-emission secondary electron and atomic force microscopes. The DSC has assembled using ruthenium-based dye, microstructured ZnO films, KI/I2-based electrolyte, and carbon counter-electrode. The photovoltage and the fill factor of DSCs have improved due to the presence of the ZnO passivating-layer. The photocurrent, photovoltage, and the photoelectric conversion efficiency of DSC increase with the increase of PEG contents. The DSC based on ZnO films prepared with 2.0g of PEG shows the maximum efficiency of 1.83%, photovoltage of 463mV, and photocurrent of 7.2mAcm−2in 100mWcm−2light intensity.