Gate-Self-Aligned N-Channel and P-Channel Germanium Mosfets
Gate-Self-Aligned N-Channel and P-Channel Germanium Mosfets
复制标题
栅极自对准 N 沟道和 P 沟道锗 Mosfets
DOI：
10.1109/16.158709
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
J. DeGelormo
中科院分区：
文献类型：
--
作者：
C. Ransom;T. Jackson;J. DeGelormo
只提供摘要形式。制备了栅极自对准锗mosfet。栅极自对准意味着栅极用作离子注入的掩膜结构，形成重掺杂源极和漏极区（以前的自对准Ge mosfet使用假栅工艺）。采用氮化锗栅极介质制备了n沟道和p沟道锗反转模mosfet，其室温跨导率为>100 mS/mm，栅极长度为0.6 μ m。>
Summary form only given. Gate-self-aligned germanium MOSFETs were fabricated. By gate-self-aligned it is meant that the gate is used as the mask structure for the ion implantation that forms heavily doped source and drain regions (previous self-aligned Ge MOSFETs used a dummy-gate process). A germanium oxynitride gate-dielectric was used to fabricate n- and p-channel germanium inversion-mode MOSFETs with transconductances >100 mS/mm at room temperature at a gate length of 0.6 mu m for both n- and p-channel devices. >